SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING

专利名称：SEMICONDUCTOR MEMORY DEVICE AND

METHOD OF FORMING THE SAME

发明人：Sung-Il Chang,Changseok Kang,Byeong-In

Choe

申请号：US13173321申请日：20110630

公开号：US20120003828A1公开日：20120105

专利附图：

摘要：A method of manufacturing a semiconductor device includes forming alaminated structure including sacrificial layers and a select gate layer on a substrate,

forming a penetration region penetrating the laminated structure, forming a select gateinsulating layer on a sidewall of the select gate layer exposed by the penetration region,and forming an active pattern in the penetration region. The method also includesexposing a portion of the active pattern by removing the sacrificial layers and forming aninformation storage layer on the exposed portion of the active pattern.

申请人：Sung-Il Chang,Changseok Kang,Byeong-In Choe

地址：Hwaseong-si KR,Seongnam-si KR,Yongin-si KR

国籍：KR,KR,KR

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